CSM-88121E, elektronika schematy, noty aplikacyjne
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CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
A
CORPORATION
Rev.
PRODUCT SPECIFICATION
Model No CSM-88111G/88121G
Descriptions:
1.2 Inch 8X8 Dot-Matrix Display
Dot Pitch 4.0mm
CSM-88111: Column Anode, Row Cathode
CSM-88121: Column Cathode, Row Anode
Emitting Color: Yellow Green
CUSTOMER APPROVED
APPROVED BY
CHECKED BY
PREPARED BY
SIGNATURES
CHINA SEMICONDUCTOR CORPORATION
OPTO PLUS TECHNOLOGIES CO.,LTD
Address:2FL. NO.909,Chung-Cheng Road,
Address:696 Shun jiang Rd.,Ji Shan St.Shaoxing,
Chung-Ho City Taipei Hsien,Taiwan.
ZheJiang,China
Tel:886-2-2223-9696
Tel:86-0575-88623888
Fax:886-2-2223-9377
Fax:86-0575-88623112
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
CORPORATION
Rev.
A
Model No CSM-88111G/88121G
Features -
1. 1.2 inch (30.8mm) Matrix height.
2. 8x8 array with X-Y select.
3. RoHS compliant.
4. Low power consumption.
5. Easy mounting on P.C. board or socket.
Device Selection Guide -
Part No.
Chip
Description
Material
Emitted Color
Column
Row
CSM-88111G
GaP
Yellow Green
Anode
Cathode
CSM-88121G
GaP
Yellow Green
Cathode
Anode
Package Dimensions -
Page
1/5
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
A
CORPORATION
Rev.
Model No CSM-88111G/88121G
Internal Circuit Diagrams -
Page
2/5
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
CORPORATION
Rev.
A
Model No CSM-88111G/88121G
Absolute Maximum Rating -
(Ta=25 )
Parameter
Power Dissipation Per Dice
Symbol
Rating
Unit
P
AD
70
25
90
mW
Continuous Forward Current Per Dice
I
AF
mA
Peak Current Per Dice(duty cycle 1/10,1KHz)
I
PF
mA
Derating Linear From 25 Per Dice
-
0.33
mA/
5
Operating Temp.
-35 ~ +85
Storage Temp.
-35 ~ +85
Solder temperature 1/16 inch below seating plane for 3 seconds at 260
V
R
V
Topr
Tstg
Electro-optical Characteristics -
(Ta=25 )
Parameter
Forward Voltage Per Dot
Symbol
Min.
Typ.
Max.
Unit
Condition
V
F
-
2.1
2.8
V
I
F
=20mA
Luminous Intensity Per Dot
Iv
-
4
-
mcd
I
F
=10mA
Peak Emission Wavelength
q
-
568
-
nm
I
F
=20mA
Dominant Wavelength
O
d
-
572
-
nm
I
F
=20mA
Spectrum Radiation Bandwidth
-
30
-
nm
I
F
=20mA
Reverse Current
JS
-
-
100
A
V
R
=5V
Luminous Intensity Matching Ratio
IV-m
-
-
2:1
.
Ip=80mA
1/16Duty
Page
3/5
Reverse Voltage Per Dice
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
CORPORATION
Rev.
A
Model No CSM-88111G/88121G
Typical Electrical / Optical Charateristics Curves -
(Ta = 25 Unless Otherwise Noted)
Page
4/5
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CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
A
CORPORATION
Rev.
PRODUCT SPECIFICATION
Model No CSM-88111G/88121G
Descriptions:
1.2 Inch 8X8 Dot-Matrix Display
Dot Pitch 4.0mm
CSM-88111: Column Anode, Row Cathode
CSM-88121: Column Cathode, Row Anode
Emitting Color: Yellow Green
CUSTOMER APPROVED
APPROVED BY
CHECKED BY
PREPARED BY
SIGNATURES
CHINA SEMICONDUCTOR CORPORATION
OPTO PLUS TECHNOLOGIES CO.,LTD
Address:2FL. NO.909,Chung-Cheng Road,
Address:696 Shun jiang Rd.,Ji Shan St.Shaoxing,
Chung-Ho City Taipei Hsien,Taiwan.
ZheJiang,China
Tel:886-2-2223-9696
Tel:86-0575-88623888
Fax:886-2-2223-9377
Fax:86-0575-88623112
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
CORPORATION
Rev.
A
Model No CSM-88111G/88121G
Features -
1. 1.2 inch (30.8mm) Matrix height.
2. 8x8 array with X-Y select.
3. RoHS compliant.
4. Low power consumption.
5. Easy mounting on P.C. board or socket.
Device Selection Guide -
Part No.
Chip
Description
Material
Emitted Color
Column
Row
CSM-88111G
GaP
Yellow Green
Anode
Cathode
CSM-88121G
GaP
Yellow Green
Cathode
Anode
Package Dimensions -
Page
1/5
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
A
CORPORATION
Rev.
Model No CSM-88111G/88121G
Internal Circuit Diagrams -
Page
2/5
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
CORPORATION
Rev.
A
Model No CSM-88111G/88121G
Absolute Maximum Rating -
(Ta=25 )
Parameter
Power Dissipation Per Dice
Symbol
Rating
Unit
P
AD
70
25
90
mW
Continuous Forward Current Per Dice
I
AF
mA
Peak Current Per Dice(duty cycle 1/10,1KHz)
I
PF
mA
Derating Linear From 25 Per Dice
-
0.33
mA/
5
Operating Temp.
-35 ~ +85
Storage Temp.
-35 ~ +85
Solder temperature 1/16 inch below seating plane for 3 seconds at 260
V
R
V
Topr
Tstg
Electro-optical Characteristics -
(Ta=25 )
Parameter
Forward Voltage Per Dot
Symbol
Min.
Typ.
Max.
Unit
Condition
V
F
-
2.1
2.8
V
I
F
=20mA
Luminous Intensity Per Dot
Iv
-
4
-
mcd
I
F
=10mA
Peak Emission Wavelength
q
-
568
-
nm
I
F
=20mA
Dominant Wavelength
O
d
-
572
-
nm
I
F
=20mA
Spectrum Radiation Bandwidth
-
30
-
nm
I
F
=20mA
Reverse Current
JS
-
-
100
A
V
R
=5V
Luminous Intensity Matching Ratio
IV-m
-
-
2:1
.
Ip=80mA
1/16Duty
Page
3/5
Reverse Voltage Per Dice
CHINA
SEMICONDUCTOR
Spec. No.
PS-ND-08090304
CORPORATION
Rev.
A
Model No CSM-88111G/88121G
Typical Electrical / Optical Charateristics Curves -
(Ta = 25 Unless Otherwise Noted)
Page
4/5
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