CNY74-4

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TELEFUNKEN Semiconductors
CNY74-2/CNY74-4
Multichannel Optocoupler with Phototransistor Output
Description
The CNY74-2 and CNY74-4 consist of a phototransistor
optically coupled to a gallium arsenide infrared emitting
diode in a 8 lead, resp. 16 lead plastic dual inline pack-
ages.
The elements are mounted on one leadframe in coplanar
technique, providing a fixed distance between input and
output for highest safety requirements.
95 10534
95 10828
Applications
Galvanically separated circuits, non-interacting
switches.
CNY74-2 includes 2 isolator channels
Low coupling capacitance typical 0.3 pF
CNY74-4 includes 4 isolator channels
C
urrent
T
ransfer
R
atio (CTR) typical 100%
DC isolation test voltage V
IO
= 2.5 kV
Low temperature coefficient of CTR
Test class 25/100/21 DIN 40 045
Wide ambient temperature range
Pin Connections
8
7
6
5
16
15
14
13
12
11
10
9
1
2
3
4
1
2
3
4
5
6
7
8
CNY74-2
CNY74-4
Rev. A1: 19.09.1995
1 (6)
Features
CNY74-2/CNY74-4
TELEFUNKEN Semiconductors
Absolute Maximum Ratings
for single coupled system
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Reserve voltage
V
R
6
V
Forward current
I
F
60
mA
Forward surge current
t
p
3
10
s
I
FSM
1.5
A
Power dissipation
T
amb
3
25
°
C
P
V
100
mW
Junction temperature
T
j
125
°
C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V
CEO
70
V
Emitter collector voltage
V
ECO
7
V
Collector current
I
C
50
mA
Peak collector current
t
p
/T = 0.5, t
p
3
10 ms
I
CM
100
mA
Power dissipation
T
amb
3
25
°
C
P
V
150
mW
Junction temperature
T
j
125
°
C
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
DC Isolation test voltage
V
IO
1)
2.5
V
Total power dissipation
T
amb
3
25
°
C
P
tot
250
mW
Ambient temperature range
T
amb
–40 to +100
°
C
Storage temperature range
T
stg
–55 to +125
°
C
Soldering temperature
2 mm from case,
t
3
10 s
T
sd
260
°
C
1)
related to standard climate 23/50 DIN 50 014
2 (6)
Rev. A1: 19.09.1995
TELEFUNKEN Semiconductors
CNY74-2/CNY74-4
Electrical Characteristics
for single coupled system, T
amb
= 25
°
C
Input (Emitter)
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I
F
= 50 mA
V
F
1.25
1.6
V
Breakdown voltage
I
R
= 100
A
V
(BR)
5
V
Output (Detector)
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter break-
down voltage
I
C
= 1 mA
V
(BR)CEO
70
V
Emitter collector break-
down voltage
I
E
= 100
A
V
(BR)ECO
7
V
Collector dark current
V
CE
= 20 V,
I
F
= 0, E = 0
I
CEO
100
nA
Coupler
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
DC Isolation test voltage
t = 2 s
V
IO
1)
2.5
kV
Isolation resistance
V
IO
= 1000 V,
40% relative humidity
R
IO
1)
10
10
10
12
Collector current
I
F
= 5 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
C
I
C
2.5
6
5
12
30
mA
mA
I
C
/I
F
I
F
= 10 mA, V
CE
= 5 V
CTR
0.5
1
6
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA
V
CEsat
0.3
V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
f
c
100
kHz
Coupling capacitances
f = 1 MHz
C
k
0.3
pF
1)
related to standard climate 23/50 DIN 50 014
Rev. A1: 19.09.1995
3 (6)
CNY74-2/CNY74-4
TELEFUNKEN Semiconductors
Switching Characteristics (Typical Values)
V
S
= 5 V
R
L
= 100 k
, see figure KEIN MERKER
R
L
= 1 k
, see fig.
KEIN MERKER
Type
ype
t
d
[
s] t
r
[
s] t
on
[
s] t
s
[
s] t
f
[
s] t
off
[
s] I
C
[mA] t
on
[
s] t
off
[
s] I
F
[mA]
CNY74-2/ CNY74-4
3.0
3.0
6.0
0.3
4.7
5.0
2
9
18
10
I
F
I
F
+ 5 V
0
I
C
= 2 mA ;
adjusted through
input amplitude
R
G
= 50
t
p
= 0.01
T
t
p
= 50
s
Channel I
Oscilloscope
Channel II
R
L
= 1 M
50
100
C
L
= 20 pF
95 10804
Figure 1. Test circuit, non saturated operation
4 (6)
Rev. A1: 19.09.1995
TELEFUNKEN Semiconductors
CNY74-2/CNY74-4
I
F
I
F
= 10 mA
+ 5 V
0
I
C
R
G
= 50
t
p
= 0.01
T
t
p
= 50
s
Channel I
Oscilloscope
Channel II
R
L
1 M
50
1 k
C
L
20 pF
95 10843
Figure 2. Test circuit, saturated operation
Rev. A1: 19.09.1995
5 (6)
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